Prototype Business

Tianma Japan offers high reliability and quality products that utilizes own LCD manufacturing capability/know-hows, provides various type of film deposition, patterning and glass cutting, and can be a partner who can cooperate in the development of new technologies and new products in material, processing, machine manufacturers and research institutes.

 

Feature of prototype

• Integrated process (deposition, patterning, cutting)

• Various metal materials, inorganic insulating film materials, and organic insulating film materials are available

• Support small-quantity level trial production to mass production.

• Support design such as CAD works.

• Support the production of products not only LCD and the contract processing of prototypes using LCD manufacturing technology, equipment, and know-how.

• Thick Cu wiring processing with Cu plating is available.

• Measurement such as thickness of layer for samples is an option. Please let us know.

• Mounting IC, assembling FPC to glass are an option. Please let us know.

• Reliability test is an option. Please let us know.

 

Available process

￭Substrate processing              *Process based on 550x660mm and thickness of glass:0.5mm or 0.7mm.

Process		Equipment	Remarks
Cleaning		UV/Chemical/Highpressure/Ultrasonic/Pure water
Deposition	Metal	Sputter	AlNd, MoNb, ITO, Cr, Cu, etc.
	Insulator (inorganic)	P-CVD *	SiNx, SiOx, etc.
	Insulator (organic)	Spin coater	Acrylic resin, Polyimide resin
	Semiconductor	P-CVD, Sputter	a-Si, InGaZnO₄
Patterning Photolithography	Coating resist	Spin coater
	Exposure   *Tianma Japan can support design	Aligner	Processing ability≥4μm Overlay accuracy≤±2μm
		Stepper	Processing ability≥4μm Overlay accuracy≤±2μm
		Proximity	Processing ability≥8μm Overlay accuracy≤±3μm
	Development	Development
	Etching	Dry etching	SiOx, SiNx, Cr
		Wet etching	SiOx, SiNx, Cr
	Stripping	Amine based treatment
High temperature annealing(bake)		Hot air circulation	O2 concentration can be adjusted by N2

*Please refer to the following table for the thickness of each material.
*Pegarding P-CVD, film formation is possible even on small sized substrates and silicon wafers.

 

CVD equipment slot	CVD equipment	ITO sputter

Photolithography equipment slot	Stepper	Dry etching equipment

 

 

Table1:Deposition material, Thickness, Line width, Resistance
 Below is available type of material, thickness.

	Type	Thickness (nm)	Minimum line width / Spacing(μm)	Ratio value (μΩ·cm)	Remark
Wiring/ Electrode	AL alloy	30~500	4/5	5	With Mo Alloy lamination
	Mo alloy	30~300	4/4.5	16
	ITO (Transparent conductive)	40~150	4/5	165~800
	Cr	30~50	4/4	20
	Cu	30~200	4/9	3

Thickness, line width and spacing is just guideline.
Measurement such as thickness of layer for samples is an option. Please let us know.

 

Table2:Material, Thickness, Line width

	Type	Thickness (nm)	Minimum line width / Spacing(μm)	Remark
Insulator	SiNx	50~1000	5	Contact hole formation available
	SiOx	50~200	5
	Acrylic resin	1500~25000	10
	Polyimide resin	100~10000	10
	a-Si	10~250	5
	InGaZnO₄	30~200	5

Thickness, line width and spacing is just guideline. If you have request, please let us know.
Measurement such as thickness of layer for samples is an option. Please let us know.

￭Post-process

￭Bonding