Joint Research Paper Won an Award at Sensor Symposium

For immediate use Nov. 18, 2014
NLT Technologies, Ltd.

We are pleased to announce that our joint research paper with Yamagata Research Institute of Technology on application of amorphous indium-gallium-zinc oxide thin-film transistors (a-InGaZnO TFT) won an award at 31st Sensor symposium on “Sensors, Micromachines and Applied Systems” (Oct. 20th-22nd).

The symposium is the major annual event for the Institute of Electrical Engineers of Japan Sensors and Micromachines Society.

This joint research paper, “High sensitivity pH sensors based on amorphous indium-gallium-zinc oxide thin-film transistors", discusses pH sensing of electrolyte using a-InGaZnO TFTs and demonstrates the possibility of pH-sensitivity enhancement through the top-gate effect in a-InGaZnO TFTs.

Thin-film semiconductor technology has been widely spread as one of the core technologies in liquid crystal displays. On the other hand, oxide thin-film semiconductors including a-InGaZnO are highly expected not only to be applied in liquid crystal displays, but also to break a new ground of novel applications.

The 31st SENSOR SYMPOSIUM
Yamagata Research Institute of Technology (Japanese website)

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